Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation
نویسندگان
چکیده
منابع مشابه
Physics-Based Modeling of Hot-Carrier Degradation
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We have studied the characteristics of MOSFET degradation induced by hotcarriers. When the characteristics of drain current degradation (A/j) are applied to the stress time(t) dependence AIj oc t, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2010
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2010.2079912